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Quality guaranteed We sell only warrantied and traceable partsMfg Part Number: S82S129W
NSN : 5962-01-076-6620
NIIN : 010766620
CAGE Code : 18324
Manufacturer: Philips Semiconductors Inc
Item Name : Microcircuit Memory
If you’re in need of NSN parts, look no further than NSN Orbit. Owned and operated by ASAP Semiconductor, we have access to an unparalleled inventory of parts and components for the aerospace, civil aviation, defense, electronics, and industrial markets. This includes parts such as Microcircuit Memory from Philips Semiconductors Inc, as well as part numbers like S82S129W and many more. NSN Orbit has more than two billion new and obsolete parts readily available with short lead times and competitive prices, and as we are an AS9120B, ISO 9001:2015, and FAA AC 00-56B accredited business, and the only independent distributor with a strict No China Sourcing Pledge, each part we sell is fully traceable or comes directly from the manufacturer.
Our website offers an array of parametric search capabilities that allow our customers to search for parts through a number of filters, one of which is the National Stock Number, or NSN. A National Stock Number is an identifier applied to any item of supply that is repeatedly procured, stocked, stored, issued, and used throughout the federal supply system. NSN Orbit has a broad selection of NSN parts such as 5962010766620 from manufacturers like Philips Semiconductors Inc. To begin the purchasing process immediately, submit an RFQ today for part number S82S129W.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-076-6620 Item Description: Microcircuit Memory | 5962 | 010766620 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | U | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| S82s129w | 2 | 9 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAU | BODY HEIGHT | 0.085 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT AND SCHOTTKY AND HIGH SPEED AND EXPANDABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND W/ENABLE AND W/DI |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| TEST | TEST DATA DOCUMENT | 82577-932820 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 FLAT LEADS |
| ADAQ | BODY LENGTH | 0.440 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 910.0 MILLIWATTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
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